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A 250-element charge coupled device is described in which the transfer electrodes are delineated and isolated using an undercut-etch technique. The device has metal electrodes on two thicknesses of oxide and is primarily intended to be operated in a two-phase manner. Measurements of transfer inefficiency as a function of frequency have been made on both n- and p-channel devices. Below 1 MHz, values of 4 × 10−4per transfer independent of transfer frequency have been obtained. Above 1 MHz the transfer inefficiency progressively rises as the dynamics of charge motion limit the transfer of charge.
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Tompsett et al. (1973) studied this question.
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