Electrical Properties of Silicon Diode Array Camera Targets Made by Boron Ion Implantation

Silicon diode targets used as the image-sensing element of video camera tubes have been successfully fabricated with one photolithographic step using boron ion implantation to form the array of ∼ 800 000 p+n diodes. Targets have been made reproducibly in this way with total leakage currents ≲ 10 nA at 12-V bias and 0–2 low-intensity white video defects per target. The results, which are insensitive to changes in dose and energy, show that heavily boron-implanted oxides can be annealed to give low-surface recombination velocity (S0 ∼ 7 cm/sec) and fixed charge (Qss/q ≃ 2.0 × 1011 cm−2). In addition, the bulk effective lifetime in the space-charge region of the implanted diodes is measured to be τ > 200 μsec.