Using n-doped InGaAs/InP multi-quantum-well samples we compare measurements of ion-beam-induced quantum well broadening made by cross-sectional scanning tunneling microscopy and cross-sectional scanning transmission electron microscopy with the broadening calculated from the blueshift of the low temperature photoluminescence peak using different models of the intermixing process. Results are consistent with a simple square well model used to interpret photoluminescence shifts, but disagree with a model of separate Fick’s law diffusion on group III and V sublattices.
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Piva et al. (1998) studied this question.
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