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July 15, 1992Journal of Applied Physics

Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused-ion-beam implantation

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Authors

LALouise AllardCentre Hospitalier de l’Université de MontréalGAG. C. AersNational Research Council CanadaSCS. CharbonneauCentre Intégré Universitaire de Santé et de Services Sociaux du Centre-Sud-de-l'Île-de-Montréal

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Allard et al. (1992) studied this question.

synapsesocial.com/papers/6a6fb99b2163a0a01bc3fdf4https://doi.org/10.1063/1.351870
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects1991 · 15 citations
  2. 2One-dimensional GaAs wires fabricated by focused ion beam implantation1987 · 56 citations
  3. 3Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrode1989 · 36 citations
  4. 4Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content1989 · 25 citations
  5. 5Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation1990 · 8 citations