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November 1, 1989Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures

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Authors

FLFrançois LaruelleLSP Technologies (United States)PHPengcheng HuGuilin University of TechnologyRSR. J. SimesThe University of Sydney

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Laruelle et al. (1989) studied this question.

synapsesocial.com/papers/6a8522ee22ea7ab258b2e661https://doi.org/10.1116/1.584643
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