The influence of ion implantation in the thermal properties of silicon wafers at room temperature is investigated using the photoacoustic technique. It is suggested that the observed decrease of the values of both thermal diffusivity and conductivity, as the implantation dose increases, is due to the amorphization of the implanted layer.
No takes yet. Share an insight, caveat, or question.
Neto et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: