Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1970Radiation Effects

A model for the formation of amorphous Si by ion bombardment

View Full Paper
Ask AI
Bookmark
Share

Authors

FMF. F. MoreheadIBM (United States)BCB. L. CrowderIBM (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Morehead et al. (1970) studied this question.

synapsesocial.com/papers/6a8522edf14ace264a43d116https://doi.org/10.1080/00337577008235042
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON1970 · 178 citations
  2. 2The Observation of Atomic Collisions in Crystalline Solids1970 · 40 citations
  3. 3The Role of Damage in the Annealing Characteristics of Ion Implanted Si1970 · 39 citations
  4. 4Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering1968 · 277 citations
  5. 5Ion implantation in semiconductors—Part I: Range distribution theory and experiments1968 · 244 citations