Carrier concentration profiles are presented for Si which has been implanted with a low , intermediate or high dose of 280 keV P 31 ions at room temperature and subjected to a 30 min post implantation anneal in the temperature range 550°‐850°C. The annealing behavior of these samples is correlated with the amount of damage produced by the room temperature implantation. If a continuous amorphous region is present, ions within this region become electrically active and uncompensated during the epitaxial recrystallization of the layer between 550° and 600°C. These results are generalized to provide a model for the annealing characteristics observed for room temperature and elevated temperature ion implanted Si layers.
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B. L. Crowder (1970) studied this question.