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July 1, 1974Journal of Applied Physics

Annealing properties of ion-implanted p-n junctions in silicon

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Authors

AMA. E. MichelKarunya UniversityFFF. F. FangIBM (United States)EPEr PanUniversity of Electronic Science and Technology of China

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Michel et al. (1974) studied this question.

synapsesocial.com/papers/6a8522edf14ace264a43d113https://doi.org/10.1063/1.1663714
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