We investigate selective area growth of lattice-matched InGaAsP/InP, and strained InGaAs/InP and InAsP/InP multiple quantum wells on SiO2-masked InP substrate by chemical beam epitaxy. This method can be used to produce quantum well p-i-n waveguide modulators with a single growth step. Photoluminescence measurements performed on waveguide stripes ranging from 1–50 μm in width reveal a red shift of the band edge with decreasing stripe width in InGaAsP/InP and InGaAs/InP quantum well systems, but no shift in InAsP/InP quantum wells for stripe widths larger than 1 μm. In addition, we find that this band-gap tunability is stripe orientation dependent.
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Chen et al. (1993) studied this question.
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