Answers are grounded in this paper and cite their sources.
A high-speed InGaAs/InAlAs multiple-quantum-well (MQW) intensity modulator and an InGaAsP/InGaAs MQW distributed feedback laser were monolithically integrated by using a hybrid growth technique combining molecular beam epitaxy and metalorganic vapor phase epitaxy. An operating drive voltage of only 2.0 V, a 20-dB on/off ratio, and a 3-dB bandwidth greater than 15 GHz were obtained. This device operated stably in a single mode and with a side-mode suppression ratio of more than 50 dB.>
No takes yet. Share an insight, caveat, or question.
Kotaka et al. (1993) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: