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November 7, 1991Electronics Letters

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

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Authors

MAMasahiro AokiTosoh (Japan)HSH. SanoNagoya Institute of TechnologyMSM. SuzukiSetsunan University

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Aoki et al. (1991) studied this question.

synapsesocial.com/papers/6a85234e0743ff3319d97acchttps://doi.org/10.1049/el:19911324
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