Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity-induced disordering

Impurity-induced disordering of GaAs/AlGaAs multiple quantum well waveguide structures has been carried out using the neutral impurities boron and fluorine, introduced by ion implantation and followed by thermal annealing. Substantial blue shifts (up to 100 meV) in the absorption edge have been obtained and, for similar conditions, fluorine-induced disordering produces larger shifts than boron-induced disordering. Optical transmission measurements performed in slab and rib waveguides indicate that the additional contribution to the absorption coefficient associated with boron disordering is 15 dB cm−1 and with fluorine disordering is only 6 dB cm−1.