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A number of single-crystal p-type Si samples were implanted with Cs+ ions to various concentrations and depths. The secondary electron emission coefficient δ of these samples was found to be as much as 28% higher than for untreated Si samples. In particular, the low value of primary voltage needed to obtain δ>1 suggests the use of such emitters in applications where secondary emission buildup at low primary voltages is desired.
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G. T. Konrad (1972) studied this question.
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