Specific site location of S and Si in ion-implanted GaAs

Rutherford backscattering and proton induced x-ray emission in combination with channeling have been used to investigate the specific site location of S and Si implanted in GaAs through the asymmetry in their channeling dips. A pronounced asymmetry is observed for 〈110〉 scans parallel to the {11̄0} plane in the case of S, whereas no such asymmetry is found for the case of Si. These results clearly indicate that S predominantly occupies one sublattice site which is shown to be the As site whereas Si occupies both Ga and As sites in about equal concentrations.