The current-gain cutoff frequency performance of pseudomorphic InGaAs/AlGaAs (20% InAs composition) high-electron-mobility transistors (HEMTs) on GaAs is compared to that of lattice-matched InGaAs/InAlAs HEMTs on InP. The current-gain cutoff frequency (f/sub t/) characteristics as a function of gate length (L/sub g/) indicate that the f/sub t/-L/sub g/ product of approximately 26 GHz- mu m in InGaAs/InAlAs HEMTs is 23% higher than that of approximately 21 GHz- mu m in InGaAs/AlGaAs HEMTs. The performance of InGaAs/AlGaAs HEMTs is also 46% higher than that of conventional GaAs/AlGaAs HEMTs ( approximately 18 GHz- mu m). These data are very useful in improving the device performance of HEMTs for a given gate length.>
No takes yet. Share an insight, caveat, or question.
Hikosaka et al. (1988) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: