Low cost ion implantation into silicon and pulsed annealing. application to the manufacturing of solar cells

A simple procedure has been developed for high current ion implantation. In particular, no mass separation is used in the beam. The procedure is described in some detail, as well as the various characteristics of the implanted layers: ion distribution, damage (macroscopic and microscopic), effects of conventional and pulsed annealing. This technique has been employed for preparing solar cells on silicon. The properties of these devices will be reviewed and compared to conventionally prepared cells.