Elimination of secondary defects in As-implanted Si by high concentration oxygen atoms

Arsenic precipitate-induced dislocation loops generated at the projected range Rp of As in high-dose As-implanted, annealed (100) Si are eliminated, if oxygen-atom concentrations at the Rp region are high, i.e., above about 1×1020 atoms/cm3 . This is confirmed by the following two experiments: 80 keV, 2×1016 As+/cm2, 18-nm-thick through-oxide implantation together with subsequent annealing and a double implantation of 80 keV, 2×1016 As+ /cm2 and 22 keV, 5×1015 O+ /cm2 , followed by an annealing sequence. Experimental results suggest that the bonding of several As atoms with one oxygen atom suppresses As clustering.