The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1×1015 cm−2, 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and released when they are reached by the moving a-c interface during the SPEG process.
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Souza et al. (1992) studied this question.
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