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June 24, 1969Proceedings of the Royal Society of London A Mathematical and Physical Sciences

The distribution of condensed defect structures formed in annealed boron-implanted silicon

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RBR. W. BicknellJohn Innes Centre

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R. W. Bicknell (1969) studied this question.

synapsesocial.com/papers/6a853d7af2bb7ee68cf23fdfhttps://doi.org/10.1098/rspa.1969.0101
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