High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier

High-power tensile strained multiquantum-well AlGaInP laser diodes (λL = 636 nm) with a multiquantum barrier have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 9° towards the (011) direction. The maximum CW output power achieved was 40 mW. These lasers operated for more than 500 h without significant degradation under 20 mW at 50°C.