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Disordered Ga0.52{In}0.48$P- (${Al}0.7Ga0.3{)}0.52In0.48P bulk and quantum-well epilayers, lattice matched to GaAs substrates misoriented from (100), have been studied by low-temperature photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The effects of excitonic weak localization are discussed by comparison between the PL and PLE data. Envelope-function fitting of the excitonic transitions observed in PLE has been used to determine a conduction-band discontinuity {Δ}Ec of {~}0.67{Δ}Eg, providing strong support for the value obtained by Liedenbaum et al. [Appl. Phys. Lett. 57, 2699 (1990)].
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Dawson et al. (1993) studied this question.
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