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Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55°C (70 A/cm2). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250°C).
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Kish et al. (1996) studied this question.
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