The aging characteristics of transverse-mode stabilized InGaAlP laser diodes at high-power operation above 10 mW have been investigated. A rapid degradation mode related to the inner optical density of the laser was observed. This degradation mode could be effectively suppressed by reducing the inner optical density, adopting an asymmetric facet coating, and with a thinner active layer. Highly reliable operation at a high-power level above 10 mW for more than 1000 hours has been realized.
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Itaya et al. (1991) studied this question.
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