Room-temperature photoluminescence measurements have been carried out at high pressure on (Ga,In)P layers grown by two different methods. The pressure dependence of the direct energy-band gap was fitted with a second-order function. Evidence of the direct-indirect band crossing has been observed from the reduction in the photoluminescence efficiency at about 2.8 GPa pressure.
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Patel et al. (1989) studied this question.
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