Photoluminescence measurements on n-type InP have been carried out under hydrostatic pressure in a diamond anvil cell at 20 K. The photoluminescence peak corresponding to the direct-band-gap transition has been observed up to 12 GPa and has been found to change sublinearly with pressure, similar to room-temperature measurements. The effect of shear strains on the photoluminescence signal is also discussed. The intensity of the luminescence signal was obtained as a function of pressure.
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Menoni et al. (1986) studied this question.
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