Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbide

The electrical properties of thermal oxides grown on p-type 6H-silicon carbide were investigated during this work. Thermal oxides were grown on 7×1015 cm−3 aluminum doped p-type 6H-silicon carbide at 1275 °C in a dry oxygen ambient. Capacitance-voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1×1011 cm−2 eV−1 and 8×1012 cm−2 respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping.