Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630°C

InGaP layers were grown on GaAs (100) substrates by liquid phase epitaxy. The growth temperature ( T G ) was varied from 738 to 630°C. Layer qualities such as the surface morphology and photoluminescence characteristics were investigated. They became inferior with decreasing growth temperature when T G was lower than 700°C. The growth period required to grow a smooth surface was found to be shortened for T G 's below 650°C.