Liquid Phase Epitaxy (LPE) of Ga x In 1- x P on (100)- and (111)B-oriented GaAs substrates has been studied at the growth temperature of 735°C. The results indicate that the Ga distribution coefficient, growth rate and luminescence half-widths depend significantly on the substrate orientation. These types of behavior are qualitatively similar to those reported earlier for the growth of Ga x In 1- x As on InP.
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Kume et al. (1982) studied this question.
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