Molecular Beam Epitaxial Growth of (AlyGa1-y)0.5In0.5P on (100) GaAs

High-quality (Al y Ga 1- y ) 0.5 In 0.5 P layers lattice-matched to a (100) GaAs substrate have been grown by molecular beam epitaxy with the dimetric phosphorus (P 2 ) beam. The line width of a room temperature photoluminescence spectrum of an undoped layer of Ga 0.5 In 0.5 P and (Al 0.33 Ga 0.67 ) 0.5 In 0.5 P is as narrow as 36.5 and 40.6 meV, respectively. The former is comparable to the line width reported on high-quality liquid-phase epitaxial layers. An n-Al 0.44 In 0.56 P layer (Si=2×10 17 cm -3 ) lattice-mismatched to a GaAs substrate has shown a fairly intense room-temperature photoluminescence comparable to the edge emission of an n-(Al 0.65 Ga 0.35 ) 0.5 In 0.5 P lattice-matched to a GaAs substrate.