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We report a novel application of high-speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr-doped GaAs photoconducting switch activated by a synchronously mode-locked cw dye laser. Infrared light pulses of 55-ps width are emitted from the semiconductor laser.
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Göbel et al. (1983) studied this question.
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