Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy

Studying a uniformly excited ensemble of InAs islands, the emission intensities of the allowed radiative transitions are modeled in the state-filling limit for pulsed and steady-state excitation as a function of the average number of electron-hole pairs per dot. The only unknown parameters included in the equations are the radiative recombination rates of each transition. For steady-state excitation, it is found that in the high excitation limit the emission intensity ratio of any two transitions tends towards a well-defined value proportional to the ratio of their recombination rates. The results of the model are compared with experiments for steady-state excitation and excited states radiative lifetimes are obtained experimentally.