Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

Passive crossbar resistive random access memory (RRAM) arrays require select devices with nonlinear I-V characteristics to address the sneak-path problem. Here, we present a systematical analysis to evaluate the performance requirements of select devices during the read operation of RRAM arrays for the proposed one-selector-one-resistor (1S1R) configuration with serially connected selector/storage element. We found high selector current density is critical and the selector nonlinearity (ON/OFF) requirement can be relaxed at present. Different read schemes were analyzed to achieve high read margin and low power consumption. Design optimizations of the sense resistance and the storage elements are also discussed.