Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory

This is the authors' abstract. We don't add key points for this paper.

A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.