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Controlling the insulator‐metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for unlocking exotic structural transformation and physical functionality. Oxygen vacancies serve as a powerful tuning knob for adjusting the IMT property of VO 2 , though driving topochemical reduction to V 2 O 3 remains rather challenging due to structural incompatibility and competing phase instability. Here, a consecutive oxygen‐vacancy‐driven VO 2 ‐VO 2‐x ‐V 2 O 3 topotactic phase transformation route is demonstrated with pronounced facet‐dependent anisotropy, engendering widely tunable IMT properties across an extended temperature range over 200 K. Remarkably, topochemically reduced V 2 O 3 inherits the crystallographic characteristics from parent VO 2 , enabling the possibility of accessing exotic lattice framework with tunable IMT behaviors. Analogous electron doping arising from hydrogenation and oxygen vacancies contributes cooperatively to drive Mott phase transition in VO 2 through band‐filling control, while ionic interactions between protons and oxygen vacancies markedly accelerate the oxygen ionic mobility. The work not only establishes a framework for engineering physical functionality through defect‐mediated topotactic transition and band filling but also provides fundamentally new insights for filling‐controlled Mott physics.
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Zhou et al. (2025) studied this question.
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