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We report the first integrated injection-locked high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This device emits a near-diffraction-limited (0.5° full width at half maximum) single-lobed far-field emission beam at single-facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single-lobed emission over an angular range of 0.50° at a rate of −1.2×10−2 deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high-power diode laser devices.
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Hohimer et al. (1989) studied this question.
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