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Monte Carlo calculation on steady-state electron transport properties in uncompensated and compensated Al0.25In0.75As at several lattice temperatures is reported. It is found that alloy scattering has a significant effect on electron drift velocities at high fields, and that the electron velocity-electric field characteristics of compensated Al0.25In0.75As exhibit less temperature dependence than uncompensated Al0.25In0.75As. The small Γ valley effective mass and the large Γ to L and Γ to X valley separations of Al0.25In0.75As result in the excellent low-field mobilities and the peak velocities in comparison to those of GaAs, InP, and In0.53Ga0.47As over the range of doping compensations considered.
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Ernest Y. Wu (1990) studied this question.
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