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The transient overshoot of the electron velocity for compensation GaAs is calculated using the Monte Carlo method. The transient electron velocity characteristics are compared for various compensation ratios. The influence of the compensation ratio on the GaAs MESFET structure was simulated using a two-dimensional Monte Carlo simulator. The drain current, transconductance, and channel electron velocity of submicrometer MESFETs are presented for various compensation ratios.>
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T.A. Grotjohn (1988) studied this question.
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