In VLSI and ULSI integrated circuit (IC) fabrication, the problem of planarity is well known, particularly at the intermetallic level. Numerous planarization approaches involving either the materials and/or techniques have been put forward. For multichip module (MCM) fabrication, thin-film multilayer substrates with excellent characteristics have become increasingly essential for miniaturizing and achieving a high level of functionality. Therefore, as for IC fabrication, topography-induced problems increase with increasing integration density. The author reviews various planar techniques which can be used in the fabrication of multilevel interconnects and compares their interest for MCMs.>
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A. Schiltz (1992) studied this question.
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