Improved forward-voltage p/n junction space-charge region capacitance based on time-domain reasoning

The time-domain reasoning employed in deriving a previous p/n junction space-charge region capacitance model is elaborated for semiconductor p/n junctions under forward voltage. The previous model is improved by defining the applicable voltage range and by discussing high-injection effects. Results obtained from this model agree well with experimental and numerical results obtained previously. This treatment also provides the dependence of the space-charge region thickness at large forward voltage.