Synchrotron radiation photoelectron spectroscopy has been used to investigate III–V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick sulfide layer with P–S bond and strong Ga–S (In–S) bond of high thermal stability is formed on the neutralized (NH4)2S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)2S solutions to III–V phosphide surfaces are also discussed.
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Yuan et al. (1998) studied this question.
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