Experimental study demonstrates fivefold enhanced telecom emission in InP quantum dots on gold thin films, indicating improved light-matter coupling for quantum communication.
We demonstrate the integration of molecular beam epitaxy (MBE)-grown InP-based quantum dots (QDs) on gold thin films, achieving a fivefold enhancement of emission at telecom wavelengths compared with QDs grown on distributed Bragg reflectors (DBRs). Micro-photoluminescence (µ-PL) spectroscopy reveals a pronounced enhancement of the PL intensity, which is attributed to plasmon-assisted light–matter interaction at the metal–semiconductor interface. Reflectivity measurements reveal a characteristic dip near the QD emission wavelength, consistent with the excitation of surface plasmon resonances (SPRs), indicating favorable spectral overlap between the plasmonic modes and the QD emission. Power-dependent measurements reveal background-free exciton and biexciton emission from single QDs with resolution-limited linewidths. Polarization-dependent measurements demonstrate an ultra-small excitonic fine-structure splitting as low as ~2 μeV. Finally, a statistical analysis of multiple QDs confirms the reproducibility of the observed optical properties.
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Kaur et al. (2026) studied this question.
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