Review of the Sputtering Process for Obtaining Thin Films and Their Application to the III-Nitride Compounds

We present a brief review that highlights the importance of III-Nitride semiconductor compounds according to their structural, compositional, morphological, and optical properties, which have significant applications in new semiconductor devices and play a fundamental role in modern electronic and optoelectronic technologies. The importance of sputtering as a viable alternative for obtaining III-Nitride semiconductor compounds is discussed. This is due to its versatility, cost, ease of handling, and advantages provided by the physics of its operation in obtaining thin films compared to techniques such as metal–organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE). The physics of the sputtering method is briefly and clearly described, including magnetron configurations, plasma generation, energy dependence of sputtering, reactive sputtering, hysteresis effects, target types, and the importance of temperature and working distance between the substrate and target. In addition, the review of the literature on the application of sputtering for obtaining III-Nitride semiconductor compounds is presented. Furthermore, this review also highlights the future of sputtering, which is moving towards high-power pulsation, atomic-level precision, and AI-driven automation due to the miniaturization of electronics, advances in green technology, and innovations in plasma control to increase film density and reduce target material loss.