A SnO/SnO2 p–n junction diode is fabricated using a room-temperature sputtering process. The p–n diode shows an ideality factor of ≈3 and rectification ratio of ≈103. A large temperature-dependent knee voltage shift is observed (−20 mV °C−1) for the diode, indicating its potential in transparent temperature sensing applications.
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Wang et al. (2015) studied this question.
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