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October 27, 2022Nature CommunicationsOpen Access

Strongly enhanced THz generation enabled by a graphene hot-carrier fast lane

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Authors

DZDehui ZhangZXZhen XuGCGong Cheng

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Overview

Experimental study demonstrates an 80-fold terahertz amplitude enhancement in graphene-silicon hybrid switches, indicating a path toward higher-power ultrafast optoelectronic devices.

Key Points

  • To overcome the fundamental trade-off between carrier lifetime and output power in terahertz photoconductive switches using a graphene-silicon hybrid architecture.
  • Fabricated a hybrid photoconductive switch combining graphene with a silicon substrate to establish an ultrafast hot-carrier transfer pathway.
  • Generated photoexcited carriers within the silicon layer and transferred hot carriers into the graphene overlayer for rapid contact collection.
  • The graphene-silicon hybrid switch produced terahertz fields with up to an 80-fold amplitude enhancement relative to a graphene-free silicon switch.
  • Demonstrated efficient ultrafast hot-carrier collection without the high defect densities that typically reduce device emission power.

Cite This Study

Zhang et al. (2022) studied this question.

synapsesocial.com/papers/6a858682f047f857d83dafcehttps://doi.org/10.1038/s41467-022-34170-3
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