Defect Production in Phosphorus Ion-Implanted SiO₂(43 nm)/Si Studied by a Variable-Energy Positron Beam

Vacancy-type defects in 150-keV P + -implanted SiO 2 (43 nm)/Si(100) specimens were studied by a variable-energy positron beam. The results show that the damaged layer induced by P + -implantation extends far beyond the stopping range of phosphorus ions. From isochronal annealing experiments, it was found that oxygen atoms recoiled from the SiO 2 layer into the Si substrate, forming stable oxygen-vacancy complexes in the substrate near the interface. The final recovery of vacancy-type defects was observed at 1200°C.