Variable-energy (0∼30 keV) positron beam studies have been carried out on 80 keV B+-implanted SiO2(43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B+-implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B+ ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO2/Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage.
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Uedono et al. (1989) studied this question.
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