Disorder in implanted semiconductors: Energy dependence and penetration depth

The energy dependence of lattice disorder produced by implanting Hg ions of energy 10 to 200 keV into Si crystals has been studied at room temperature. The damage produced has been studied by means of the channeling technique with 2.0 and 3.0 MeV 4He+ beams. The number of Si atoms displaced per implanted ion has been observed to increase linearly with the implantation energy over the whole range studied, in agreement with the Kinchin-Pease theory. The slope of this linear relationship is (53 ± 6) keV−1. The penetration depth of lattice disorder produced by Hg200, Xe131, and Kr84 in Si and Hg200 implanted in Ge has been measured in the energy interval 10 to 200 keV. A comparison is presented between the disorder penetration depth and the implanted ion range.