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This paper compares hard-driven gate-turn-off thyristors (IGCTs) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter. The structure, fundamental operation and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of f/sub s/=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.
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Bernet et al. (1999) studied this question.
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