X-ray photoelectron spectroscopy studies of CdTe-GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence-band offset between these two materials is found to be large (470 meV). Cd-Te-metal-GaAs multilayers have been grown with very thin metal films. The CdTe-GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence-band offset is compared with recent theoretical calculations taking into account interface dipoles.
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Waag et al. (1990) studied this question.
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